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Progress in P-type Tunnel Oxide‐Passivated Contact Solar Cells with Screen-Printed Contacts

: Mack, S.; Herrmann, D.; Lenes, M.; Renes, M.; Wolf, A.

Fulltext urn:nbn:de:0011-n-6340006 (1.6 MByte PDF)
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Created on: 21.4.2021

Solar RRL 5 (2021), No.5, Art. 2100152, 9 pp.
ISSN: 2367-198X
Journal Article, Electronic Publication
Fraunhofer ISE ()
Photovoltaik; Passivating contacts; silicon solar cell; solar cell; solar cell metallization; TOPCon; Silicium-Photovoltaik; Dotierung und Diffusion; Oberflächen: Konditionierung; Passivierung; Lichteinfang; Metallisierung und Strukturierung; Pilotherstellung von industrienahen Si-Solarzellen

Herein, an update on the work on high‐efficiency p‐type solar cells with p‐type‐passivating rear contacts formed by low‐pressure chemical vapor deposition and screen‐printed contacts is given. It is shown that thin polysilicon layers enable a high level of surface passivation but do show increased contact resistivity and especially contact recombination. Commercially available pastes and dependence of contact resistivity and contact recombination on polylayer thickness and firing set temperature are investigated. For 240 nm‐thick poly‐Si layers, the values down to 4 mΩ cm2 and 60 fA cm−2 are observed. For the presented process sequence, improved hydrogenation as one possibility to increase the passivation quality of the passivating contact structure is identified. Implementing all findings into a final solar cell, a maximum total area conversion efficiency of 21.2% is reported.