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2020
Conference Paper
Titel
Front Side Optimization on Boron- and Gallium-Doped Cz-Si PERC Solar Cells Exceeding 22% Conversion Efficiency
Abstract
This work reviews on our industrial-oriented passivated emitter and rear cell (PERC) baseline process for Czochralski-grown silicon (Cz-Si) wafers at the Fraunhofer ISE PV-TEC pilot-line. We perform several front side optimizations based on homogeneous emitter doping: finger width reduction of the screen-printed silver fingers, improved silver paste, and implementation of low-temperature thermal oxidation. This yields peak energy conversion efficiencies of 22.1% for boron-doped Cz-Si from LONGi and 22.2% for gallium-doped Cz-Si from Fraunhofer CSP. We show that gallium-doped Cz-Si wafers offer an industrially feasible option to further improve PERC-type but also other solar cell concepts on p-type Cz-Si. We also demonstrate the possibility to omit regeneration procedures that are needed to suppress the boron-oxygen-related light-induced degradation effects as known for conventional borondoped Cz-Si.
Author(s)
Tags
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Photovoltaik
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boron
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Cz-Si
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diffusion
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front side optimization
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gallium
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PERC
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screen printing
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Silicium-Photovoltaik
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Charakterisierung von Prozess- und Silicium-Materialien
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Dotierung und Diffusion
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Oberflächen: Konditionierung
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Passivierung
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Lichteinfang
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Metallisierung und Strukturierung
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Pilotherstellung von industrienahen Si-Solarzellen