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Highly efficient p-i-n-type organic light emitting diodes on ZnO:Al substrates

: Tomita, Y.; May, C.; Toerker, M.; Amelung, J.; Eritt, M.; Loeffler, F.; Luber, C.; Leo, K.; Walzer, K.; Fehse, K.; Huang, Q.


Applied Physics Letters 91 (2007), No.6, Art. 063510, 3 pp.
ISSN: 0003-6951
ISSN: 1077-3118
Journal Article
Fraunhofer IPMS ()

Aluminum doped zinc oxide (ZAO) is presented in this letter as an alternative transparent electrode: optimized ZAO films offer excellent parameters for organic light emitting diodes (OLEDs). The ZAO films are applied to various p-i-n-type OLEDs. By using green phosphorescent molecules in a double emitter structure, very high efficiencies were obtained, namely, 54.6 cd/A and 61.5 lm/W for 100 cd/m(2) at 2.78 V. Additionally, white OLEDs on ZAO demonstrated pure white emission independent of the luminance and high efficiencies of 12.6 cd/A and 14.5 lm/W for 100 cd/m(2) at 2.6 V, which is comparable to indium-tin-oxide based white OLEDs.