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High-pulse-energy passively Q-switched quasi-monolithic microchip lasers operating in the sub-100-ps pulse regime

: Nodop, D.; Limpert, J.; Hohmuth, R.; Richter, W.; Guina, M.; Tünnermann, A.


Optics Letters 32 (2007), No.15, pp.2115-2117
ISSN: 0146-9592
Journal Article
Fraunhofer IOF ()
saturable absorber mirror

We present passively Q-switched microchip lasers with items bonded by spin-on-glass glue. Passive Q-switching is obtained by a semiconductor saturable absorber mirror. The laser medium is a Nd:YVO4 crystal. These lasers generate pulse peak powers up to 20 kW at a pulse duration as short as 50 ps and pulse repetition rates of 166 kHz. At 1064 rim, a linear polarized transversal and longitudinal single-mode beam is emitted. To the best of our knowledge, these are the shortest pulses in the 1 µJ energy range ever obtained with passively Q-switched microchip lasers. The quasi-monolithic setup ensures stable and reliable performance.