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Al1-xScxN thin films for pyroelectric IR detectors

 
: Bröker, S.; Fichtner, S.; Bette, S.; Tiedke, S.; Tappertzhofen, S.; Wagner, B.

VDE/VDI-Gesellschaft Mikroelektronik, Mikro- und Feinwerktechnik -GMM-:
MikroSystemTechnik Kongress 2019 : Mikroelektronik - MEMS-MOEMS - Systemintegration - Säulen der Digitalisierung und künstlichen Intelligenz, 28. - 30. Oktober 2019, Berlin
Berlin: VDE-Verlag, 2019
ISBN: 978-3-8007-5090-0
ISBN: 978-3-8007-5129-7
pp.424-427
MikroSystemTechnik Kongress <2019, Berlin>
English
Conference Paper
Fraunhofer ISIT ()

Abstract
Aluminum nitride (AlN) is a CMOS compatible pyroelectric material with excellent dielectric and piezoelectric properties. This makes AlN an attractive candidate for MEMS applications. Compared to PZT, AlN has a lower pyroelectric coefficient but a comparable signal to noise ratio due to its superior dielectric properties. AlN can be doped with scandium, which leads to an increase of the piezoelectric coefficient [3]. As flattening of the ionic potential energy landscape implies a greater thermally induced ionic mobility, Sc doping has also the potential to improve the pyroelectric performance. The deposition of the Al1-xScxN is performed by co-sputtering and easily allows to control and vary the Scconcentration. The highest pyroelectric coefficient with a value of p = 19.3 muC/m2K is measured at a Sc-concentration of x = 0.36, which is more than a factor of two higher compared to AlN. For pure AlN a value of p = 9.7 muC/m2K is determined.

: http://publica.fraunhofer.de/documents/N-630132.html