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2019
Conference Paper
Titel
Toward Diamond-Collector Heterojunction Bipolar Transistors via grafted GaAs-Diamond n-p junction
Abstract
We demonstrated GaAs/diamond (GaAs-C sp3 ) np diodes via lattice-mismatched semiconductor grafting: forming heterostructures with an ultrathin oxide (UO) layer at the interface. High-performance rectifying characteristics were measured from the GaAs/C sp3 diodes with sharp reverse breakdown voltage (Vb) of -44.5 V. Capacitance-voltage (CV) measurements were carried out and the measurement results were used to construct the band diagram of the pn junction. Furthermore, an AlGaAs/GaAs/C sp3 pnp structure was fabricated and both junctions were characterized for their I-V characteristics. The results show the prospect of realization of pnp AlGaAs/GaAs/C sp3 HBTs in the future.