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Subcell Development for Wafer-Bonded III-V//Si Tandem Solar Cells

 
: Schygulla, P.; Heinz, F.; Lackner, D.; Dimroth, F.

:

Institute of Electrical and Electronics Engineers -IEEE-:
47th IEEE Photovoltaic Specialists Conference, PVSC 2020 : 15-21 June 2020, Calgary, Canada, Virtual Meeting
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-6116-7 (Print)
ISBN: 978-1-7281-6115-0
pp.2716-2719
Photovoltaic Specialists Conference (PVSC) <47, 2020, Online>
English
Conference Paper
Fraunhofer ISE ()
Photovoltaik; AlGaAs; GaInAsP; III-V//Si; MOVPE; multijunction solar cells; III-V- und Konzentrator-Photovoltaik; III-V Epitaxie und Solarzellen

Abstract
This work focuses on the material properties of two III-V semiconductors, AlGaAs and GaInAsP, and their usage as middle cell absorber materials in a wafer-bonded III-V//Si triple-junction solar cell. To this end single-junction solar cells were grown epitaxially lattice matched on GaAs wafers using metalorganic chemical vapor phase epitaxy (MOVPE). By optimizing the growth temperature and the V/III ratio we could increase the open-circuit voltage at a target absorber bandgap of 1.50 eV by up to 100 mV. In the future these results will be implemented into two-terminal III-V//Si triple-junction solar cells to increase the conversion efficiency beyond the current record of 34.1 % under the AM1.5g solar spectrum.

: http://publica.fraunhofer.de/documents/N-624895.html