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Why and How to Measure the Non-Metallized Contact Resistivity of a Passivating Contact

: Fell, A.; Reichel, C.; Fellmeth, T.; Luderer, C.; Feldmann, F.; Hermle, M.; Glunz, S.


Institute of Electrical and Electronics Engineers -IEEE-:
47th IEEE Photovoltaic Specialists Conference, PVSC 2020 : 15-21 June 2020, Calgary, Canada, Virtual Meeting
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-6116-7 (Print)
ISBN: 978-1-7281-6115-0
Photovoltaic Specialists Conference (PVSC) <47, 2020, Online>
Conference Paper
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien

When a silicon solar cell passivating contact is combined with a metal grid, the lateral resistance of the wafer and of the passivating contact layer, as well as their interface resistances, are decisive for a high fill factor (FF). A particular challenge for characterization and modelling arises for industrial bifacial TOPCon solar cells featuring fire-through metallization on the rear side, in which case three contact resistivities are of relevance: (i) the contact resistivity over the thin oxide under the metallization, (ii) the same in the non-metallized region, and (iii) the contact resistivity between the poly-Si and the metal. We show that a common approach to determine a single lumped contact resistivity via transfer length method (TLM) may result in large errors when predicting its influence on FF. We then present a new approach to determine the three contact resistivities via a modified TLM structure and fitting of Quokka3 simulations, which we call biTLM.