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Characterization of the Segregation of Arsenic at the Interface SiO2/Si

Charakterisierung der Segregation von Arsen an der Grenzschicht SiO2/Si
: Steen, C.; Pichler, P.; Ryssel, H.; Pei, L.; Duscher, G.; Werner, M.; Berg, J.A. van den; Windl, W.

Ashok, S.:
Semiconductor Defect Engineering-Materials, Synthetic Structures and Devices II : Symposium held April 9 - 13 2007, San Francisco, California, U.S.A., Symposium F, held at the 2007 MRS spring meeting
Warrendale, Pa.: MRS, 2007 (Materials Research Society Symposium Proceedings 994)
ISBN: 978-1-55899-954-1
Symposium F "Semiconductor Defect Engineering-Materials, Synthetic Structures, and Devices" <2, 2007, San Francisco/Calif.>
Materials Research Society (Spring Meeting) <2007, San Francisco/Calif.>
Conference Paper
Fraunhofer IISB ()
arsenic; interface; silicon; characterization; txrf

The segregation of As atoms at the Si/SiO2 interface during annealing was investigated by grazing incidence X-ray fluorescence spectroscopy in combination with successive removal of silicon layers by etching with thicknesses on the order of a nanometer. With this method it is possible to clearly distinguish between the segregated atoms and the As atoms in the bulk over a large range of implantation doses from 3E12 cm-2 to 1E16 cm-2. The samples were annealed at 900 °C and 100 0 °C, respectively, for times sufficiently long to ensure that the segregation reflects an equilibrium effect. The results were confirmed by medium energy ion scattering, Z-contrast measurements and electron energy loss spectroscopy.