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In-Plane Oriented Stacks of c-AlScN/Mo (110) for BAW Resonators Grown by Magnetron Sputter Epitaxy

: Sundarapandian, Balasubramanian; Kessel, Matthias; Zukauskaite, Agne; Kirste, Lutz; Sun, Cheng; Ambacher, Oliver


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Ultrasonics, Ferroelectrics, and Frequency Control Society:
IEEE International Ultrasonics Symposium, IUS 2020. Symposium Proceedings : September 7-11, 2020, Las Vegas, NV, USA, Online Event
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-5448-0
ISBN: 978-1-7281-5449-7
4 pp.
International Ultrasonics Symposium (IUS) <2020, Online>
Conference Paper
Fraunhofer IAF ()
magnetron sputter epitaxy; in-plane orientation; annealing; AlScN; AlN; Mo; BaW; epitaxy

Magnetron sputter epitaxy was used to grow AlScN/Mo/AlN stacks on Si(111) substrates. The influence of temperature on the in-plane orientation of various layers was studied using XRD pole figures and ϕ-scans. As an alternative route to improve the quality of AlScN grown on Mo, Mo layers were annealed at various temperatures prior to overgrowth and the quality of the layers was evaluated using AFM, XRD, XRR and non-contact sheet resistance measurements.