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POCl3-Based Emitter Diffusion Process with Lower Recombination Current Density and Homogeneous Sheet Resistance for Nanotextured Monocrystalline Silicon with atmospheric Pressure Dry Etching

 
: Khan, N.W.; Ridoy, A.I.; Kafle, B.; Klitzke, M.; Schmidt, S.; Clochard, L.; Wolf, A.; Hofmann, M.; Rentsch, J.

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Fulltext urn:nbn:de:0011-n-6181710 (1.6 MByte PDF)
MD5 Fingerprint: 10a38d14fc0ed76dde5de755192857ab
Created on: 16.12.2020


Pearsall, Nicola (ed.):
37th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2020 : 07-11 September 2020, Online Conference
München: WIP, 2020
ISBN: 3-936338-73-6
pp.378-382
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <37, 2020, Online>
English
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Photovoltaik; atmospheric pressure dry etch (ADE); diffusion; homojunction; nanotexture; texturisation; Silicium-Photovoltaik; Oberflächen: Konditionierung; Passivierung; Lichteinfang

Abstract
In this work, we investigate the emitter sheet resistance and emitter recombination current density by optimizing the POCl3emitter diffusion process parameters to achieve improved electrical properties and cell performance. Wafers used in the experiment were boron-doped p-type mono-crystalline silicon samples, nanotextured in an atmospheric pressure dry etching tool (ADE) producing highly textured surfaces and decreased surface reflection. Surface roughness is subsequently reduced by a short isotropic etch, to facilitate the surface passivation. The optimization of the diffusion process is realized by adjusting the phosphorus deposition temperature and its drive-in duration, resulting in decreased emitter saturation current density of ~100 fA/cm2 and in more homogeneous emitter sheet resistance of ~105 Ω/sq. Compared to the un-optimized diffusion process, it also leads to a decreased Auger recombination.

: http://publica.fraunhofer.de/documents/N-618171.html