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Characterization of the impurity profile at the SiO2/Si interface using a combination of total reflection x-ray fluorescence spectrometry and successive etching of silicon

Charakterisierung des Profils von Fremdatomen an der SiO2/Si Grenzfläche durch eine Kombination von Totalreflektions-Röntgenfluoreszenzanalyse und sukzessivem Ätzen von Silicium
: Steen, C.; Nutsch, A.; Pichler, P.; Ryssel, H.


Spectrochimica acta. B 62 (2007), No.5, pp.481-484
ISSN: 0038-6987
ISSN: 0584-8547
Journal Article
Fraunhofer IISB ()
arsenic; interface; silicon; characterization

During the fabrication process of integrated circuits, dopant atoms segregate to energetically favorable sites at the interface between silicon and silicon dioxide. Because of the continuously shrinking device dimensions, this effect becomes even more significant. To describe it quantitatively within the framework of Technology Computer-Aided Design, the concentration profile at and near the SiO2/Si interface has to be characterized accurately. Total Reflection X-ray Fluorescence Spectrometry (TXRF) with successive etching was used to determine the impurity profile at the SiO2/Si interface with a resolution on the order of a nanometer.