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  4. Breakdown of temperature sensitivity of silicon solar cells by simulation input parameters
 
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2021
Journal Article
Title

Breakdown of temperature sensitivity of silicon solar cells by simulation input parameters

Abstract
As the electrical characteristics of silicon solar cells depend significantly on their temperature T of operation, it is vital to analyze and understand the contributions of the various cell properties in detail in order to optimize silicon solar cells for improved energy output in realistic operation conditions. Within a detailed electro-optical solar cell model, as used for numerical device simulation, accounting for full T-dependence of all cell properties has rarely been attempted to date. This is mainly due to the T-dependence of simulation input parameters not being well known or difficult to measure, resulting in unknown inaccuracy for T-dependent device simulations. This study improves previous T-dependent device models by including the T-dependence of injection-dependent bulk lifetime tbulk as well as lumped skin surface recombination parameter J0,skin, which are commonly assumed T-independent, for the ""lumped skin"" multidimensional device model employed by the software Quokka3. With this improved T-dependent device model, we present a comprehensive breakdown of a typical PERC cell's temperature sensitivity by each simulation input parameter. As figures of merit we simulate T-coefficients of IV-parameters, as well as energy yields. Overall, we find that the relative influence of the T-dependence of tbulk and J0,skin is rather small for our examples, clarifying that for modeling typical PERC cells neglecting of their T-dependence does not result in a substantial error. Nonetheless, T-dependency of the bulk material has been found to vary significantly. Also, there remains substantial uncertainty of actual T-dependence of recombination at contacts and lowly doped surfaces worth of further investigations.
Author(s)
Eberle, Rebekka
Fell, Andreas  
Schindler, Florian  
Shahid, Jibran
Schubert, Martin C.  
Journal
Solar energy materials and solar cells  
DOI
10.1016/j.solmat.2020.110836
Language
English
Fraunhofer-Institut für Solare Energiesysteme ISE  
Keyword(s)
  • Photovoltaik

  • device simulation

  • silicon solar cell

  • temperature dependence

  • Silicium-Photovoltaik

  • Charakterisierung von Prozess- und Silicium-Materialien

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