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Temperature driven memristive switching in Al/TiO2/Al devices

 
: Reiser, Daniel; Drost, Andreas; Chryssikos, Domenikos; Eisele, Ignaz; Tornow, Marc

:

Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 20th International Conference on Nanotechnology, IEEE-NANO 2020. Proceedings : Virtual conference, 29-31 July 2020
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-8264-3
ISBN: 978-1-7281-8265-0
6 pp.
International Conference on Nanotechnology (NANO) <20, 2020, Online>
Bundesministerium für Bildung und Forschung BMBF (Deutschland)
16FMD01K
Bundesministerium für Bildung und Forschung BMBF (Deutschland)
16FMD02
Bundesministerium für Bildung und Forschung BMBF (Deutschland)
16FMD03
English
Conference Paper
Fraunhofer EMFT ()

Abstract
Aluminum/titanium dioxide/aluminum memristor structures were investigated via electrical and temperature-dependent measurements. At room temperature, devices show bipolar memristive switching under applied voltage bias with OFF-ON resistance ratios on the order of 10. Increasing the temperature up to 90 -140°C such a memristor, which has been prepared in the high-resistance state (HRS) before, undergoes a pronounced switching into its low resistance state (LRS). This temperature driven switching is reversible, i.e., it can be reset via application of an appropriate bias voltage sweep, typically up to ~1 V. We have further investigated this temperature effect as function of an additionally applied bias and discuss our findings within a proposed atomistic model involving the preferential motion of oxygen vacancies into pre-exposed TiO 2 regions.

: http://publica.fraunhofer.de/documents/N-603158.html