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Temperature driven memristive switching in Al/TiO2/Al devices

: Reiser, Daniel; Drost, Andreas; Chryssikos, Domenikos; Eisele, Ignaz; Tornow, Marc


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 20th International Conference on Nanotechnology, IEEE-NANO 2020. Proceedings : Virtual conference, 29-31 July 2020
Piscataway, NJ: IEEE, 2020
ISBN: 978-1-7281-8264-3
ISBN: 978-1-7281-8265-0
6 pp.
International Conference on Nanotechnology (NANO) <20, 2020, Online>
Bundesministerium für Bildung und Forschung BMBF (Deutschland)
Bundesministerium für Bildung und Forschung BMBF (Deutschland)
Bundesministerium für Bildung und Forschung BMBF (Deutschland)
Conference Paper
Fraunhofer EMFT ()

Aluminum/titanium dioxide/aluminum memristor structures were investigated via electrical and temperature-dependent measurements. At room temperature, devices show bipolar memristive switching under applied voltage bias with OFF-ON resistance ratios on the order of 10. Increasing the temperature up to 90 -140°C such a memristor, which has been prepared in the high-resistance state (HRS) before, undergoes a pronounced switching into its low resistance state (LRS). This temperature driven switching is reversible, i.e., it can be reset via application of an appropriate bias voltage sweep, typically up to ~1 V. We have further investigated this temperature effect as function of an additionally applied bias and discuss our findings within a proposed atomistic model involving the preferential motion of oxygen vacancies into pre-exposed TiO 2 regions.