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14xx-nm high brightness tapered diode lasers grown by solid-source MBE

: Kallenbach, S.; Aidam, R.; Lösch, R.; Kaufel, G.; Kelemen, M.T.; Mikulla, M.; Weimann, G.


IEEE Photonics Technology Letters 18 (2006), No.5, pp.655-657
ISSN: 1041-1135
Journal Article
Fraunhofer IAF ()
14xx nm; high brightness; InGaAsP; semiconductor lasers; solid-cource molecular beam epitaxy (SSMBE)

We demonstrate a 1470-nm InGaAsP high-power tapered diode laser grown by all solid-source molecular beam epitaxy. Devices compare well to metal-organic vapor phase epitaxy grown lasers and reach 1.6 W of total power and 1 W of nearly diffraction-limited output power. First reliability tests indicate lifetimes exceeding 10 000 h.