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Two-Terminal direct Wafer bonded GaInP/AlGaAs//Si Triple-Junction Solar Cell with AM1.5g Efficiency of 34.1 %

 
: Lackner, D.; Höhn, O.; Müller, R.; Beutel, P.; Schygulla, P.; Hauser, H.; Predan, F.; Siefer, G.; Schachtner, M.; Schön, J.; Benick, J.; Hermle, M.; Dimroth, F.

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Fulltext urn:nbn:de:0011-n-5994717 (422 KByte PDF)
MD5 Fingerprint: e07a7b7f26dc1314a3767a657254253f
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Created on: 18.8.2020


Solar RRL (2020), Online First, Art. 2000210, 10 pp.
ISSN: 2367-198X
English
Journal Article, Electronic Publication
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; III-V und Konzentrator-Photovoltaik; Herstellung und Analyse von hocheffizienten Si-Solarzellen; III-V Epitaxie und Solarzellen; solar cell; MOVPE; wafer bonding

Abstract
The terrestrial photovoltaic market is dominated by single‐junction silicon solar cell technology. However, there is a fundamental efficiency limit at 29.4%. This is overcome by multijunction devices. Recently, a GaInP/GaAs//Si wafer‐bonded triple‐junction two‐terminal device is presented with a 33.3% (AM1.5g) efficiency. Herein, it is analyzed how this device is improved to reach a conversion efficiency of 34.1%. By improving the current matching, an efficiency of 35% (two terminals, AM1.5g) is expected.

: http://publica.fraunhofer.de/documents/N-599471.html