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2019
Conference Paper
Titel
Investigation of the oxide film formed on solid-state sintered silicon carbide ceramics at high anodic potentials
Abstract
The present work is dealing with the formation and constitution of a thin oxide film formed at high anodic voltage on a solid-state sintered silicon carbide ceramic. Electrochemical experiments and material diagnostic assessing the film surface and interphase to the substrate, mainly TEM coupled with EDX, are complementarily applied to explain seemingly contradictory results of oxide formation and gas evolution. It is shown that a 30 nm thick oxide film is formed due to a polarization at 30 V (3 M Ag/AgCl) in alkaline solution. The EDX data suggest an oxide film consisting of SiOxCy.
Author(s)