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Impact of the transition region between active area and edge termination on electrical performance of SiC MOSFET

: Liu, S.; Cheng, X.; Zheng, L.; Sledziewski, T.; Erlbacher, T.; Sheng, L.; Yu, Y.


Solid-State Electronics 171 (2020), Art. 107873
ISSN: 0038-1101
Journal Article
Fraunhofer IISB ()
gate-drain capacitance; on-resistance; SiC MOSFETs; swichting characteristics; transition region

The transition region between the active area and the edge termination of silicon carbide (SiC) MOSFET is either used to place a poly-silicon gate runner (G-MOS) or electrically contacted to the source potential (S-MOS), which is studied experimentally and by TCAD simulation in this work. The simulation results indicate that the transition region of G-MOS can effectively alleviate the propagation delay in the poly-silicon gate and allow all elementary cells to turn on quickly at the same gate voltage magnitude, which leads to a lower on-resistance (Ron), and small switching delay time. On the other hand, the transition region of G-MOS increases the Miller capacitance (Cgd), which can be reduced by shortening the length of the transition region. The simulation results are further validated by the experimental values, which show a reduction of Ron of G-MOS by 212% and an increase of Cgd of G-MOS by 72% compared to S-MOS. Moreover, the transition region barely influences the breakdown voltage of the devices, which are both higher than 1700 V.