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Photoluminescence imaging of silicon wafers

 
: Trupke, T.; Bardos, R.A.; Schubert, M.C.; Warta, W.

:

Applied Physics Letters 89 (2006), No.4, Art. 044107, 3 pp.
ISSN: 0003-6951
ISSN: 1077-3118
English
Journal Article
Fraunhofer ISE ()
Siliciummaterialcharakterisierung

Abstract
Photoluminescence imaging is demonstrated to be an extremely fast spatially resolved characterization technique for large silicon wafers. The spatial variation of the effective minority carrier lifetime is measured without being affected by minority carrier trapping or by excess carriers in space charge regions, effects that lead to experimental artifacts in other techniques. Photoluminescence imaging is contactless and can therefore be used for process monitoring before and after individual processing stages, for example, in photovoltaics research. Photoluminescence imaging is also demonstrated to be fast enough to be used as an in-line tool for spatially resolved characterization in an industrial environment.

: http://publica.fraunhofer.de/documents/N-59807.html