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Electron tomography of microelectronic device interconnects

Dedicated to Professor Dr. Knut Urban on the occasion of his 65th birthday
: Yang, Q.; Mardinly, J.; Kübel, C.; Nelson, C.; Kisielowski, C.

International journal of materials research 97 (2006), No.7, pp.880-884
ISSN: 1862-5282
Journal Article
Fraunhofer IFAM ()

As the dimensions of microelectronic devices continue to decrease, single transmission electron microscopy images are not able to properly represent the 3D structures when the structure's curvature is comparable to the sample thickness. Electron tomography was used to study cylindrical vias coated with Ta-barrier layers and Cu-seed layers in 3D. Tomography reconstructions from both bright field images and high angle annular dark field images are presented. Fidelity of the reconstruction from single-axis and dual-axis tilt series is compared. Strategies for improving the fidelity of the reconstruction and making electron tomography practically applicable for device failure analysis of microelectronic industry are discussed.