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Large-area lateral AlGaN/GaN-on-Si field-effect rectifier with low turn-on voltage

: Basler, Michael; Reiner, Richard; Mönch, Stefan; Waltereit, Patrick; Quay, Rüdiger; Kallfass, Ingmar; Ambacher, Oliver


IEEE Electron Device Letters 41 (2020), No.7, pp.993-996
ISSN: 0741-3106
ISSN: 0193-8576
Journal Article
Fraunhofer IAF ()
diodes; rectifier; gallium nitride; HEMT; low turn-on voltage; p-GaN gate; normally-off; power device; low treshold voltage; reverse conduction; superdiode

In this letter, we report a large-area latera lAlGaN/GaN-on-Si power rectifier as diode with low turn-on voltage. The lateral field-effect rectifier (LFER) is based on a normally-off HEMT in reverse conduction with very low threshold-voltage and shorted gate-source terminal. A p-GaN gate module was used to realize the normally-off HEMT. The large-area LFER achieves a turn-on voltage of down to 0.2 V, a specific on-resistance of 10.8 m × cm2 ,a maximum current of above 9 A with a gate width of 87 mm, and a leakage current of 57 μA/mm at a blocking voltage of 500 V. Test structures exhibit a breakdown voltage of 676 V. The effect of different depletion zone lengths, temperature influences and distribution on the turn-on voltage are investigated. Finally, this work shows that this approach of a p-GaN LFER has a great potential for rectifiers for next-generation power electronics.