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Impact of Channel Implantation on a 4H-SiC CMOS Operational Amplifier for High Temperature Applications

: Albrecht, M.; Perez, D.; Martens, R.C.; Bauer, A.J.; Erlbacher, T.


Yano, H.:
Silicon carbide and related materials 2019. ICSCRM 2019 : Selected, peer-reviewed papers from the 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019, Kyoto, Japan
Durnten-Zurich: TTP, 2020 (Materials Science Forum 1004)
ISBN: 978-3-0357-1579-8
ISBN: 3-0357-1579-3
International Conference on Silicon Carbide and Related Materials (ICSCRM) <18, 2019, Kyoto>
Conference Paper
Fraunhofer IISB ()
analog CMOS circuits; channel implantation; high temperature; mobility; MOSFET; threshold voltage

In this work, the impact of channel implantations (IMP) on the electrical characteristics of SiC n-and p-MOSFETs and analog SiC-CMOS operational amplifiers (OpAmp) is investigated. For this purpose, MOSFETs and Miller OpAmps with and without IMP were fabricated and electrically characterized from room temperature up to 350°C. For devices with IMP the absolute values of the threshold voltages of n-and p-MOSFETs were reduced by 1.5 V and the mobility of the n-MOSFET was increased from 13 to 23 cm2/Vs whereas the mobility of the p-MOSFET remained constant at 6 cm2/Vs. For the resulting OpAmp with IMP, the common-mode input voltage range as well as the open loop gain was increased by 1.5 V and 4 dB compared to non-implanted devices. This improvement was observed across the entire analyzed temperature range from room temperature up to 350°C.