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Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology

 
: Rusch, Oleg; Hellinger, Carsten; Moult, Jonathan; Corcoran, Yunji; Erlbacher, Tobias

:

Yano, H.:
18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 : Kyoto, Japan, September 29 to October 4, 2019
Durnten-Zurich: TTP, 2020 (Materials Science Forum 1004)
pp.155-160
International Conference on Silicon Carbide and Related Materials (ICSCRM) <18, 2019, Kyoto>
English
Conference Paper
Fraunhofer IISB ()
4H-SiC; Junction Barrier Schottky (JBS); Merged PiN-Schottky (MPS); wafer thinning; laser annealing; substrate resistivity; facet region

Abstract
This work presents the influence of Thin Wafer und Laser Anneal Technology on the electrical performance of 4HSiC devices. Substrate thinning and backside ohmic contact formation via laser annealing were successfully applied to in-house designed and manufactured 6 A 650 V SiC diodes at IISB, improving its forward characteristics. The given devices exhibit an on-state voltage drop (VF) reduction from 1.78 V to 1.62 V at 6 A rated current while maintaining blocking capabilities of more than 1.1 kV with leakage currents less than 1 μA at 650 V nominal voltage. On-resistance (RON) was lowered by approx. 30 % to 90 mΩ and 60 % to 12 mΩ in Schottky and conductivity modulation state, respectively. Wafer thinning also allows reducing the influence of non-homogeneous distributed substrate doping concentrations, leading to a more narrow distribution of the forward characteristics of the devices across the wafer.

: http://publica.fraunhofer.de/documents/N-597036.html