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Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiC

: Hellinger, Carsten; Rusch, Oleg; Rommel, Mathias; Bauer, Anton J.; Erlbacher, Tobias


Yano, H.:
18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 : Kyoto, Japan, September 29 to October 4, 2019
Durnten-Zurich: TTP, 2020 (Materials Science Forum 1004)
International Conference on Silicon Carbide and Related Materials (ICSCRM) <18, 2019, Kyoto>
Conference Paper
Fraunhofer IISB ()
laser annealing; implant activation; ohmic contact

In this work, pulsed-laser-based tempering was applied for post-implant annealing of n-type N-doped 4H-SiC in order to electrically activate the dopants and to rebuild the crystal structure. The annealing was performed by a frequency-tripled Nd:YVO4 laser with a pulse duration of 60 ns. To evaluate the effects of post-implant annealing, JBS diodes were electrically characterized. The results were compared with implanted, not post-annealed JBS diodes. The electrical measurements showed a significant on-state voltage drop of 40 mV at 6 A for post-implant laser annealed diodes compared to not post-implant annealed diodes.