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Ultrafast THz Conductivity Dynamics of a Novel Fe-Doped InGaAs Quantum Photoconductor

: Richter, P.-H.; Kartal, E.; Kohlhaas, R.B.; Semtsiv, M.P.; Schell, M.; Masselink, W.T.; Globisch, B.; Koch, M.


IEEE Transactions on Terahertz Science and Technology 10 (2020), No.2, pp.167-175
ISSN: 2156-342X
Journal Article
Fraunhofer HHI ()

We propose an Fe-doped, InGaAs-based semiconductor heterostructure optimized for the application as an ultrafast photoconductor and investigate its optical as well as THz properties. A sample series with varying doping concentration is grown by molecular-beam epitaxy. After examination of its static optical properties, the pump-induced intraband carrier dynamics are investigated via optical pump-THz probe measurements. Here, we observe conductivity decay times as low as 0.23 ps which are attributed to electron capture into Fe-related defects. These results are corroborated by monitoring the corresponding interband dynamics via all-optical pump-probe measurements. In addition, the competitiveness of THz detectors fabricated from a subset of these samples is demonstrated by integrating them into a standard time-domain spectrometer.