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Phosphorus donors in highly strained silicon

: Huebl, H.; Stegner, A.R.; Stutzmann, M.; Brandt, M.S.; Vogg, G.; Bensch, F.; Rauls, E.; Gerstmann, U.


Physical review letters 97 (2006), No.16, Art. 166402
ISSN: 0031-9007
ISSN: 1079-7114
Journal Article
Fraunhofer IZM ()

The hyperfine interaction of phosphorus donors in fully strained Si thin films grown on virtual Si1-xGex substrates with x <= 0.3 is determined via electrically detected magnetic resonance. For highly strained epilayers, hyperfine interactions as low as 0.8 mT are observed, significantly below the limit predicted by valley repopulation. Within a Green's function approach, density functional theory shows that the additional reduction is caused by the volume increase of the unit cell and a relaxation of the Si ligands of the donor.