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2006
Journal Article
Titel
Creep testing of MOSi2 - Bases composites
Abstract
The creep resistance Of MOSi2 composite materials in ambient atmosphere has been studied in the temperature range 1273-1673 K under a load of 100 MPa. The material MoSi2 containing 10 vol% nanometersized SiC particles had the optimum microstructure. Creep tests of the investigated composite materials confirmed their relatively good creep resistance. Creep parameters changed with temperature differently in each material. The highest creep resistance, at temperature 1273 K, had the material MOSi2-10% nanometer-sized SiC particles. At the temperature interval 1473-1673 K, the materials MOSi2 - 10 vol.% SiC particles and MOSi2 - 10 vol-% Si3N4 particles were the most resistant.