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Considerations for Through-Substrate-Via Placement in InGaAs mHEMT THz Circuits Using Thin-Film Wiring

: John, Laurenz; Neininger, Philipp; Tessmann, Axel; Leuther, Arnulf; Zwick, Thomas

Verband Deutscher Elektrotechniker e.V. -VDE-, Berlin:
German Microwave Conference, GeMiC 2020 : March 09-11, 2020, Cottbus, Germany
Piscataway, NJ: IEEE, 2020
ISBN: 978-3-9820397-1-8
ISBN: 978-1-7281-4206-7
German Microwave Conference (GeMiC) <2020, Cottbus>
Conference Paper
Fraunhofer IAF ()
solid-state power amplifier; InGaAs mHEMT; sub-mm-wave operation

This paper discusses the necessity of through-substrate vias for compact integrated circuits (ICs) at frequencies around 300GHz, which are implemented using backside-process-free thin-film microstrip line (TFMSL) matching networks. The technology used is a 35-nm InGaAs mHEMT technology, which is processed on a GaAs substrate. The measured S-parameters of 300-GHz common-source (CS) and cascode power amplifier ICs with different via-placement scenarios are presented, which indicate a topology-dependent necessity of through-substrate-via implementation in order to suppress the excitation of substrate resonances and inter-device coupling. Different scenarios for via placement are investigated experimentally and evaluated in simulation, in order to define requirements for via-placement considerations in compact TFMSL circuits in this InGaAs mHEMT technology.