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A unified approach to charge-conservative capacitance modelling in HEMTs

: Kallfass, I.; Schumacher, H.; Brazil, T.J.


IEEE microwave and wireless components letters 16 (2006), No.12, pp.678-680
ISSN: 1051-8207
ISSN: 1531-1309
Journal Article
Fraunhofer IAF ()
modulation-doped field effect transistor; semiconductor device modeling; MODFET

The voltage dependence of high electron mobility transistor (HEMT) gate-source- and gate-drain capacitance is described by a set of equations based on a unified charge-conservative model approach. The model is applied to a low-noise GaAs pseudomorphic-HEMT (pHEMT) technology as well as its power variant. In terms of topology and parameters, the new expressions resemble the Curtice drain current model. They provide a globally accurate description of nonlinearities in HEMT capacitance.