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Growth and magnetic properties of Ge1-xMnx single crystals

: Kim, S.K.; Park, S.E.; Cho, Y.C.; Cho, C.-R.; Jeong, S.-Y.

Journal of the Korean Physical Society 49 (2006), No.97, pp.S518-S522
ISSN: 0374-4884 (Print)
ISSN: 1976-8524 (Online)
Journal Article
Fraunhofer IGB ()

Group IV ferromagnetic semiconductor, Ge1-xMnx large size crystals were grown by the Czochralski method in an Ar ambient. The magnetic atom, Mn, was systematically doped into Ge crystal from x = 0 to x = 0.176 and these compositions precisely were obtained by glow discharge spectroscopy. The increase of Mn concentration brought a new Ge8Mn11 phase in Ge matrix. The magnetizations increase greatly reach a maximum value at x = 0.113. The formation of Ge8Mn11 phase is responsible for a ferromagn etic phase between 150 K and 281 K. Especially, in the ferromagnetic phase, the maximum remanent magnetization at x = 0.113 was 0.483 emu/g, which is larger than other results. This feature can be used for some spin devices, because of a large magnetic moment in a low magnetic field.