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A systematic state-space approach to large-signal transistor modeling

Eine systematische Zustandsraumbeschreibung für die Großsignal-Modellierung von Transistoren
: Seelmann-Eggebert, M.; Merkle, T.; Raay, F. van; Quay, R.; Schlechtweg, M.


IEEE transactions on microwave theory and techniques 55 (2007), No.2, Part 1, pp.195-205
ISSN: 0018-9480
Journal Article
Fraunhofer IAF ()
GaN HEMT; large-signal (LS) transistor modeling; Großsignalmodellierung; low-frequency (LF) dispersion; LF-dispersion; state-space approach; Zustandsraumbeschreibung; transistor

A state-space approach to large-signal (LS) modeling of high-speed transistors is presented and used as a general framework for various model descriptions of the dispersive features frequently observed for HEMTs at low frequency. Ensuring unrestricted LS-small-signal (SS) model compatibility, the approach allows to construct LS models from multibias SS S-parameter measurements. A general transformation between state-space models is derived, which are equivalent in the SS limit, but nonequivalent under LS stimuli. This transformation has the potential to compensate deviations observed by comparing model predictions with LS measurements and to find an optimum state linear LS model without any change of the SS behavior.