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Transport Losses at the TCO/a-Si:H/c-Si Heterojunction: Influence of Different Layers and Annealing

: Luderer, C.; Messmer, C.; Hermle, M.; Bivour, M.

Fulltext ()

IEEE Journal of Photovoltaics 10 (2020), No.4, pp.952-958
ISSN: 2156-3381
ISSN: 2156-3403
Journal Article, Electronic Publication
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Herstellung und Analyse von hocheffizienten Si-Solarzellen

To improve silicon heterojunction solar cells even further, minimizing transport losses within the charge carrier selective junctions and layers is mandatory. With this in mind, we present a systematic quantification of the transport losses of the electron (contact resistivity, ρc ≈ 30 mΩ·cm²) and hole ( ρc ≈ 240 mΩ·cm²) contact of our silicon heterojunctions, which enable fill factors above 80% on cell level. We identify the cause of the higher transport losses of the hole contact to be the intrinsic a-Si:H and ITO layer and that these layers are also responsible for a limited thermal stability. Furthermore, temperature-dependent I–V measurements reveal the nonohmic nature of the transport losses in case that intrinsic a-Si:H and transparent conductive oxide are part of the heterojunction.