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Design and fabrication of 3300V 100mΩ 4H-SiC MOSFET with Stepped p-body structure

 
: Ni, W.; Wang, X.; Xu, M.; Li, M.; Feng, C.; Xiao, H.; Li, W.; Wang, Q.; Schlichting, H.; Erlbacher, T.

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Institute of Electrical and Electronics Engineers -IEEE-:
16th China International Forum on Solid State Lighting and International Forum on Wide Bandgap Semiconductors China, SSLChina & IFWS 2019. Proceedings : 25-27 November 2019, Shenzhen, China
Piscataway, NJ: IEEE, 2019
ISBN: 978-1-7281-5756-6
ISBN: 978-1-7281-5757-3
pp.50-53
China International Forum on Solid State Lighting (SSLChina) <16, 2019, Shenzhen>
International Forum on Wide Bandgap Semiconductors China (IFWS) <2019, Shenzhen>
English
Conference Paper
Fraunhofer IISB ()
economic and social effects; electric field effects; energy gap; fabrication; interface states; junction gate field effect transistors; lighting; MOSFET devices; semiconductor junctions; silicon carbide; silicon compounds; threshold voltage

Abstract
In this paper, a 3300 V 100 mΩ 4H-SiC planar MOSFET with stepped p-body structure was designed and fabricated. 2D TCAD tool was used to design the MOSFET cell and field limiting ring junction termination structure. The junction field-effect transistor (JFET) region was optimized to get better trade-off between on-resistance and maximum gate oxide electric field in off-state. The stepped p-body was formed by two step ion implantations to transfer the avalanche point from the edge of the p-body to the deep p+ area. Finally, the threshold voltage of 1.7 V, subthreshold swing of 188 mV/decade and the average interface state density of 5.35E11 cm -2 eV -1 were obtained from the measured transfer curve.

: http://publica.fraunhofer.de/documents/N-586820.html