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Injection level dependent luminescence characteristics of UV-violet emitting (AlGaIn)N LED structures

Abhängigkeit der Lumineszenz Charakteristik von UV-violett emittierenden (AlGaIn)N LED Strukturen von der Injektionsdichte
: Kunzer, M.; Baeumler, M.; Köhler, K.; Leancu, C.-C.; Kaufmann, U.; Wagner, J.


Physica status solidi. A 204 (2007), No.1, pp.236-240
ISSN: 0031-8965
ISSN: 1862-6300
ISSN: 1521-396X
ISSN: 1862-6319
Journal Article
Fraunhofer IAF ()
UV LEDs; AlGaIN; Piezoeffekt; piezo-effect; quantum efficiency; Quanteneffizienz; current dependence; Strom-Abhängigkeit

A series of (AlGaIn)N LEDs covering the 377 to 428 nm wavelength interval has been analyzed by pulsed electro- and temperature dependent photo-luminescence with respect to the carrier density dependence of the quantum efficiency and peak position. A non-thermal rollover of the quantum efficiency vs. current is observed for the LEDs with higher In content and longer wavelengths (lambda > 400 nm). The photoluminescence data reveal In induced band tails as well as the presence of a quantum confined stark effect. Both effects contribute to the observed non-thermal rollover.