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Mass Separation Issues for the Implantation of Doubly Charged Aluminum Ions

: Häublein, V.; Bauer, A.J.; Ryssel, H.; Frey, L.


Häublein, Volker ; Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
22nd International Conference on Ion Implantation Technology, IIT 2018. Proceedings : 16-21 September 2018, Würzburg, Germany
Piscataway: IEEE, 2018
ISBN: 978-1-5386-6829-0
ISBN: 978-1-5386-6828-3 (Print)
ISBN: 978-1-5386-6827-6
ISBN: 978-1-5386-6830-6
International Conference on Ion Implantation Technology (IIT) <22, 2018, Würzburg>
Conference Paper
Fraunhofer IISB ()

A phenomenon in aluminum implantation, where doubly charged Al ions may randomly and unnoticed be replaced by another ion species, is discussed. SIMS measurements were performed in order to reveal missing Al implants as well as to identify the ion species that gets implanted instead. In order to determine the contamination mechanism, simulations of mass interferences and mass spectra were carried out. It is shown that the correlation between doubly charged Al ions and the contaminating ion species strongly depends on the mass resolution of the implanter.