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Terahertz Receivers for Time-Domain Spectroscopy Made of Transition Metal Doped InGaAs: Up to 105 dB Dynamic Range

: Kohlhaas, R.B.; Globisch, B.; Breuer, S.; Nellen, S.; Liebermeister, L.; Schell, M.; Richter, P.; Koch, M.; Semtsiv, M.P.; Masselink, W.T.


Institute of Electrical and Electronics Engineers -IEEE-:
IRMMW-THz 2018, 43rd International Conference on Infrared, Millimeter, and Terahertz Waves : 9-14 September 2018, Nagoya Congress Center, Nagoya, Japan
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-3809-5
ISBN: 978-1-5386-3808-8
ISBN: 978-1-5386-3810-1
International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) <43, 2018, Nagoya>
Conference Paper
Fraunhofer HHI ()

Transition metal doped photoconductors are investigated as terahertz (THz) receivers in time-domain spectroscopy (TDS). Compared to state-of-the-art receivers based on low-temperature-grown InGaAs/lnAIAs, rhodium-doped InGaAs receivers allow for an improvement in dynamic range (DR) of 15 dB over the whole spectral range, resulting in a peak DR of 105 dB. This improvement increases the resolution in nondestructive testing applications of thin films with THz TDS.