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Low Temperature Low Intensity Effects in III-V Photovoltaic Devices for Deep Space Missions

: Hoheisel, R.; Bett, A.W.; Warner, J.H.; Walters, R.J.; Jenkins, P.P.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 : A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC, 10-15 June 2018, Waikoloa Village, HI, USA
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-8529-7
ISBN: 978-1-5386-8530-3
World Conference on Photovoltaic Energy Conversion (WCPEC) <7, 2018, Waikoloa/Hawaii>
Photovoltaic Specialists Conference (PVSC) <45, 2018, Waikoloa/Hawaii>
Photovoltaic Science and Engineering Conference (PVSEC) <28, 2018, Waikoloa/Hawaii>
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <34, 2018, Waikoloa/Hawaii>
Conference Paper
Fraunhofer ISE ()

Experimental results of GaAs solar cells tested under deep space conditions are presented. The impact of low intensity and low temperature (LILT) conditions on the device performance characteristics, in particular the fill factor, is discussed. Special consideration is given to minority carrier effects under LILT conditions, in particular tunnel assisted recombination in the space charge region and temperature dependent effective lifetime effects. The paper closes with a review of the elimination and mitigation of LILT effects by dedicated solar cell device design.