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Implications of laser-doping parameters and contact opening size on contact resistivity

: Huyeng, J.D.; Ernst, M.; Fong, K.C.; Walter, D.; Blakers, A.


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 : A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC, 10-15 June 2018, Waikoloa Village, HI, USA
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-8529-7
ISBN: 978-1-5386-8530-3
World Conference on Photovoltaic Energy Conversion (WCPEC) <7, 2018, Waikoloa/Hawaii>
Photovoltaic Specialists Conference (PVSC) <45, 2018, Waikoloa/Hawaii>
Photovoltaic Science and Engineering Conference (PVSEC) <28, 2018, Waikoloa/Hawaii>
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <34, 2018, Waikoloa/Hawaii>
Conference Paper
Fraunhofer ISE ()

Advanced silicon solar cells implement complex structures on both front and rear side. Laser processing has been shown to be a versatile and cost-effective technology for such applications. Local silicon doping or contact opening via ablation are two established process steps. In this work, we investigate their influence on the quality of local contacts with a focus on contact resistivity. We determine values for ρ C down to 70 μΩ cm 2 and 30 μΩ cm 2 for phosphorus and boron respectively, on a simple test structure with the help of three-dimensional numerical simulations.