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Cu-In fine-pitch-interconnects: Influence of processing conditions on the interconnection quality

: Bickel, S.; Sen, S.; Meyer, J.; Panchenko, I.; Wolf, M.J.


TU Dresden, Institut für Aufbau- und Verbindungstechnik der Elektronik -IAVT-; Institute of Electrical and Electronics Engineers -IEEE-; International Microelectronics and Packaging Society -IMAPS-:
7th Electronic System-Integration Technology Conference, ESTC 2018. Proceedings : 18th to 21st Sept. 2018, Dresden, Germany
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-6814-6
ISBN: 978-1-5386-6813-9
ISBN: 978-1-5386-6815-3
Electronic System-Integration Technology Conference (ESTC) <7, 2018, Dresden>
Conference Paper
Fraunhofer IZM ()

Cu-In fine pitch interconnects are a promising approach for low-temperature technologies in 3D heterogeneous integration. With decreasing structure sizes, the solder material is consumed within little joining durations. The resulting interconnection zone completely exists of intermetallic compounds (IMCs). Due to the unqiue properties of Cu-In-IMCs the interconnection quality of Cu-In fine-pitch interconnects can be affected in a quite tremendous manner when processing conditions are altered. In this work, we address the influence of the bonding duration, the bonding pressure as well as the storage time of as-plated Cu-In microbumps prior to the bonding process.