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Integrated 220-260 GHz Radar Frontend

: Merkle, Thomas; Wagner, Sandrine; Tessmann, Axel; Kuri, Michael; Massler, Hermann; Leuther, Arnulf


Institute of Electrical and Electronics Engineers -IEEE-:
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 : 15-17 October 2018, San Diego, California, USA
Piscataway, NJ: IEEE, 2018
ISBN: 978-1-5386-6502-2
ISBN: 978-1-5386-6501-5
ISBN: 978-1-5386-6503-9
BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) <2018, San Diego/Calif.>
Conference Paper
Fraunhofer IAF ()
broadband radar; milimeter-wave (mmW); FMCW; non-destructive testing; radar imaging; transceiver

Subject of this paper is an integrated transceiver frontend MMIC that was designed for millimeter-wave wideband radar systems operating at a center frequency of 240 GHz. The MMIC was implemented using a 35 nm InAIAs/InGaAs based metamorphic HEMT technology. The key RF parameters of transmit power, receiver conversion gain and noise figure, are achieved over a 1-dB defined bandwidth of 40 GHz. The MMIC was also packaged and tested in a WR-3 waveguide module. Between 220 and 260 GHz, an output power of 6 dBm with a flatness of better than 1 dB was measured, as well as an average receiver noise figure of 7 dB and a conversion gain of 10 dB. The on-wafer measured output power of the transceiver MMIC reached 8 dBm applying an increased dc drain voltage. Several breakout circuits were manufactured for additional separate on-wafer characterization of sub-functions of the transceiver MMIC. For example, the power amplifier of the transmit path achieved a saturated output power of 10 dBm at 240 GHz while consuming a chip area of only 500 x 225 μm.