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Simultaneous Contacting of Boron and Phosphorus Doped Surfaces with a Single Screen Printing Paste

: Huyeng, J.; Spribille, A.; Garcia Prince, M.; Rendler, L.C.; Ebert, C.; Eitner, U.; Clement, F.

Fulltext urn:nbn:de:0011-n-5782821 (518 KByte PDF)
MD5 Fingerprint: 3549baabc323af6752746089e2977641
Created on: 13.3.2020

36th European Photovoltaic Solar Energy Conference and Exhibition, EU PVSEC 2019 : Proceedings of the international conference held in Marseille, France, 09-13 September 2019
Marseille, 2019
ISBN: 3-936338-60-4
European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC) <36, 2019, Marseille>
Conference Paper, Electronic Publication
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Metallisierung und Strukturierung; contact; doping; metallization; screen-printing; solar cell

The contact formation by screen printed metal pastes is widely employed in standard solar cell production. To expand the use of screen printed electrodes to n-type solar cells, both boron and phosphorus doped surfaces need to be contacted. To do so with a single material has some advantages especially for IBC solar cells. In this study we test four different screen printing pastes on different boron and phosphorus dopings and in combination with different silicon nitride thicknesses. Phosphorus doping could be contacted over a wide range of sheet resistances, nitride thicknesses and fast firing conditions, leaving much freedom to target the boron contacts. Boron dopings are successfully contacted with all materials, if no capping silicon nitride layer was present. With silicon nitride capping an AgAl and an Ag paste are found to be suitable choices. The lowest contact resistivities with 100 nm SiNX capping determined in this study are C = 0.5 mΩ cm² on phosphorus (Ag) and C = 1.8 mΩ cm² on boron (Ag) doping with one single paste. These results enable highly efficient homojunction IBC cells at low cost.