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Information on Recombination under Front Fingers Based on Fourier Analysis of Photoluminscence Images

: Saint-Cast, P.; Herrmann, D.; Höffler, H.


IEEE Journal of Photovoltaics 10 (2020), No.2, pp.554-559
ISSN: 2156-3381
ISSN: 2156-3403
Journal Article
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Messtechnik und Produktionskontrolle; model; under the contacts; imaging

The extraction of the implied open-circuit voltage ( iV OC ) and saturation current density under the metal fingers ( j 0met ) using a single photoluminescence (PL) image is demonstrated in this article. The method employed to derive these parameters is based on an analytical modeling of the local p-n-junction voltage between the metallization fingers and on the analysis of the p-n-junction voltage variations obtained using a calibrated PL image. The image is analyzed in the Fourier space; taking advantage of the periodicity of the metal grid, the relevant information is extracted from the first two Fourier peaks. The ( iV OC ) and ( j 0met ) are calculated from the peaks intensities. This method is compared with one that uses two PL images. Both methods agree within their uncertainty ( ± 200 fA/cm² for j 0met ). The main advantage of the method developed in this article is that only one image is required.