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Impact of Non-Uniform Carrier Density on the Determination of Metal Induced Recombination Losses

: Herrmann, D.; Fell, A.; Höffler, H.; Lohmüller, S.; Wolf, A.


Poortmans, J. ; American Institute of Physics -AIP-, New York:
SiliconPV 2019, the 9th International Conference on Crystalline Silicon Photovoltaics : 8-10 April 2019, Leuven, Belgium
New York, N.Y.: AIP Press, 2019 (AIP Conference Proceedings 2147)
ISBN: 978-0-7354-1892-9
Art. 020005, 8 pp.
International Conference on Crystalline Silicon Photovoltaics (SiliconPV) <9, 2019, Leuven>
Conference Paper
Fraunhofer ISE ()
Photovoltaik; Silicium-Photovoltaik; Charakterisierung von Prozess- und Silicium-Materialien; Dotierung und Diffusion; photoluminescence; recombination; metallization; Quokka3

We evaluate in detail the impact of sample properties on the accuracy of a simple area-weighted approach to determine the local dark saturation current density at metal contacts j0,met. Using metallized samples, we further compare the apparent j0,met resulting from this simple approach to the j0,met value determined using numerical simulations with Quokka3. The analysis shows that the assumption of a uniform carrier density of the area-weighted approach leads to a significant underestimation of j0,met which depends strongly on sample properties as e.g. the base resistivity ρB and j0,met itself. This is confirmed by experimental data using conventional metallized samples, which demonstrate an underestimation of j0,met of up to 20% when using the area-weighted approach compared to numerical simulations.