Abstract
Short-wavelength infrared (SWIR) detection systems are increasingly in demand for surveillance, reconnaissance, and remote sensing applications. Eye-safe SWIR lasers can be utilized for active imaging systems with high image contrast and long detection range. The gated-viewing (GV) technique using short-pulse lasers and fast-gated cameras in the nanosecond range enables utilizing the distance information in addition to the signal intensity of the acquired images. The InGaAs material system is very well suited for the fabrication of high-performance SWIR photodetectors providing a typical cutoff wavelength of 1.7 μm, which covers the emission lines of available laser sources at typical telecom wavelengths around 1.55 μm. However, the usually short integration times needed for GV leads to very small photosignals. We report on the development of SWIR avalanche photodetector (APD) arrays with 640 × 512 pixels and 15 μm pixel pitch based on the InGaAs material system. The InGaAs-APD focal plane arrays have been successfully integrated into SWIR cameras which yield gain values of M ≈ 10 on camera level at a reverse bias voltage around 21 V and are the first InGaAs-based SWIR cameras worldwide providing a 640 × 512 image format and utilizing avalanche gain for signal amplification. The camera performance is demonstrated by SWIR laser GV sample images.