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Low-loss millimeter-wave SPDT switch MMICs in a Metamorphic HEMT Technology

: Thome, Fabian; Leuther, Arnulf; Ambacher, Oliver


IEEE microwave and wireless components letters 30 (2020), No.2, pp.197-200
ISSN: 1051-8207
ISSN: 1531-1309
Journal Article
Fraunhofer IAF ()
High-electron-mobility transistors (HEMTs); millimeter wave (mmW); mmW monolithic integrated circuits (MMICs); single pole double throw (SPDT); switch; V-band; W-Band

This letter presents the design and performance of two single-pole double-throw (SPDT) switches operating in V-band (50–75 GHz) and W-band (75–110 GHz). The millimeterwave (mmW) integrated circuits (MMICs) are fabricated in a 50-nm gate-length metamorphic high-electron-mobility transistor technology. Special attention was paid to the reduction of the insertion loss (IL). Thus, both switch MMICs achieve an IL of 1–1.6 dB (average 1.2 dB), covering the entire V-band and W-band, respectively. The isolation (ISO) of the switches is better than 31.6 and 28.5 dB, respectively. The input power for 1 dB of IL compression is at least 22 and 19 dBm, respectively. A wafer mapping of both circuits exhibits a high yield and low spread of IL and ISO. Based on the given results, the presented SPDT switch MMICs demonstrates state-of-the-art performance.