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Circuit-based hydrodynamic modeling of AlGaN/GaN HEMTs

: Ludwig, Florian; Bauer, Maris; Lisauskas, Alvydas; Roskos, Hartmut G.


Institute of Electrical and Electronics Engineers -IEEE-:
49th European Solid-State Device Research Conference, ESSDERC 2019 : September 23-26, 2019, Kraków, Poland
Piscataway, NJ: IEEE, 2019
ISBN: 978-1-7281-1538-2
ISBN: 978-1-7281-1539-9
ISBN: 978-1-7281-1540-5
European Solid-State Device Research Conference (ESSDERC) <49, 2019, Kraków>
Conference Paper
Fraunhofer ITWM ()
terahertz detectors; plasmonic mixing; field-effect transistors; AlGaN/GaN HEMT; two-dimensional electron gas (2-DEG); charge control model; equivalent circuit; hydrodynamic modeling

We have developed a simulation tool which enables us to perform circuit-based hydrodynamic modeling of realistic AlGaN/GaN TeraFET implementations (TeraFET: detector of THz radiation based on an antenna-coupled FET). The tool is based on the intrinsic hydrodynamic transport equations which are embedded into a commercially available circuit simulation environment via a novel implementation technique. For the modeling of the AlGaN/GaN HEMT devices under low bias conditions, we have derived a novel physics-based analytical model for the normalized Fermi level.