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Improvement in electrical properties of Simni films by multiple-steps implantation

: Lu, D.T.; Huang, D.; Ryssel, H.

Wuli-xuebao. Yuekan = Acta physica Sinica 50 (2001), No.1, pp.185-188
ISSN: 0372-736X
ISSN: 0577-9081
ISSN: 0366-6158
ISSN: 1000-3290
English, Chinese
Journal Article
Fraunhofer IISB ()

SOI-SIMNI (Silicon On Insulator-Separation by Implanted Nitrogen) films were formed by standard and multiple-step implantation methods. The Hall-effects measurements (4 - 300K) show that the multiple-step implanted SIMNI films have a lower sheet resistance and higher carrier mobility than those in standard SIMNI films. The DLTS results indicated that there is a deep level defects E-t=0.152 eV in the standard SIMNI films,and no deep level defects in the multiple-step implanted SIMNI films,which have good electrical properties.