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Deep submicron III-N HEMTs - technological development and reliability

: Quay, Rüdiger; Dammann, Michael; Kemmer, Tobias; Brueckner, Peter; Ćwikliński, Maciej; Schwantuschke, Dirk; Krause, Sebastian; Leone, Stefano; Mikulla, Michael


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
65th IEEE International Electron Devices Meeting, IEDM 2019 : December 7-11, 2019, San Francisco
Piscataway, NJ: IEEE, 2019
ISBN: 978-1-7281-4032-2
ISBN: 978-1-7281-4033-9
International Electron Devices Meeting (IEDM) <65, 2019, San Francisco/Calif.>
Conference Paper
Fraunhofer IAF ()

This paper gives the state-of-the-art (SOA) of the technological development and the reliability status of deepsubmicron Gallium Nitride (GaN) high-electron mobility transistors (HEMTs) with gate lengths of 100 nm or below. Several process technologies are discussed and epitaxial, process options, and reliability are compared. Promising GaN MMIC device results are also provided leading to improved GaN G-band operation at frequencies near 200 GHz.