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High-power-density AlGaN/GaN technology for 100-V operation at L-band frequencies

: Krause, Sebastian; Brueckner, Peter; Dammann, Michael; Quay, Rüdiger


Institute of Electrical and Electronics Engineers -IEEE-; IEEE Electron Devices Society:
65th IEEE International Electron Devices Meeting, IEDM 2019 : December 7-11, 2019, San Francisco
Piscataway, NJ: IEEE, 2019
ISBN: 978-1-7281-4032-2
ISBN: 978-1-7281-4033-9
International Electron Devices Meeting (IEDM) <65, 2019, San Francisco/Calif.>
Conference Paper
Fraunhofer IAF ()

In this paper we report on the development of a 0.50 µm AlGaN/GaN on SiC technology optimized for 100-V operation. Load pull measurements reveal a power density of more than 17 W/mm and a power-added efficiency of 77.3 % at a frequency of 1.0 GHz and a drain supply voltage of 100 V. Experimental data at 125 V even shows a power density in excess of 20 W/mm. To the authors’ knowledge, the demonstrated PAE of 77.3 % is the highest ever reported in Lband for 100-V operation.