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Distribution and Burgers vectors of dislocations in semiconductor wafers investigated by rocking-curve imaging

: Lübbert, D.; Ferrari, C.; Mikulik, P.; Pernot, P.; Helfen, L.; Verdi, N.; Korytar, D.; Baumbach, T.


Journal of Applied Crystallography 38 (2005), No.1, pp.91-96
ISSN: 0021-8898
Journal Article
Fraunhofer IZFP, Institutsteil Dresden ( IKTS-MD) ()

The method called 'rocking-curve imaging' (RCI) has recently been developed to visualize lattice imperfections in large crystals such as semiconductor wafers with high spatial resolution. The method is based on a combination of X-ray rocking-curve analysis and digital X-ray diffraction topography. In this article, an extension of the method is proposed by which dislocation densities in large-scale samples ( semiconductor wafer crystals) can be quantified and their variation across the sample surface determined in an instrumentally simple way. Results from a nearly dislocation-free S-doped InP crystal and a semi-insulating GaAs are presented; both display a clearly non-random distribution of dislocations.